High-Purity

High-Purity Water Analytical Technology for Sub 50-nm Devices

By Ikunori Yokoi et al.

Monitoring Analytics Particles Total Organic Carbon (TOC)

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Abstract

Progress in the development of a semiconductor-scaling technology and that of high-performance microelectronics products have pushed requirements for high-purity water analytical measurement technology. According to the Wafer Environment Contamination Control (WECC) section of the International Technology Roadmap for Semiconductors (ITRS), it became necessary to control the metal content in high-purity water to <0.5 nanograms per liter (ng/L) in 2007 when the technology node shifted to hp65 from hp90. Moreover, the number of particles in high-purity water must be controlled to 33-nanometer (nm) particles, which is one-half the size of half pitch to <0.2 N/mL. Then, the new high-purity water analytical technology that measures metal to 0.1 ng/L, and the number of 20-nm particle will correspond to the technical demands of the current ITRS guidelines. An organic nitrogen compound is also reported with the analysis example. Furthermore, the relationship between high-purity water quality and the amount of wafer contamination also is reported.

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